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III-V Heterojunction Structures for Long-Wavelength Injection Laser
- Source :
- DTIC AND NTIS
- Publication Year :
- 1978
-
Abstract
- Several double heterostructure injection lasers were fabricated from vapor-grown InGaAs P/InP. Laser wavelength was 1.4 micrometer. The lowest threshold current density observed was 2385 A/sq.cm. The etching characteristics of bromine-methanol-phosphoric acid solutions on InP were tabulated.<br />Sponsored in part by DARPA.
Details
- Database :
- OAIster
- Journal :
- DTIC AND NTIS
- Notes :
- text/html, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn832139356
- Document Type :
- Electronic Resource