Fabrication and Properties of Multilayer Structures

This program has as its goal the development of vapor deposition processes for application to integrated circuit technology. Its purpose is to investigate vapor deposition techniques that offer potential for synthesis of materials having new, unique structures and/or of higher quality than currently attainable. Technological application of these materials will be a significant consideration in the selection of specific systems for study. This report focuses on five individual work areas: (1) synthesis of SiO(x), (2) synthesis of SiC, (3) synthesis of Pd2Si, (4) electrical diagnostics of films, and (5) computer simulation of film synthesis.
Prepared in cooperation with Stanford/NASA Ames Joint Institute for Surface and Microstructure Research.