GaAs Surface Passivation for Device Applications.

This report describes the initial stages of a program to develop deposited dielectrics for GaAs device applications. Three applications of the dielectrics are being investigated: (1) isolation of control electrodes, (2) passivation of the GaAs surface, and (3) encapsulation of completed circuits. The dielectrics being studied include silicon oxynitride; mixtures of silicon nitrode and germanium nitride; and mixtures of silicon dioxide, gallium oxide, and aluminum oxide. Deposition techniques being employed are pyrolytic chemical vapor deposition, plasma-enhanced deposition, and photochemical deposition. This report describes the apparatus being used for this program and the chemical analysis of preliminary films deposited. No interface state measurements are reported. (Author)