Charge-Coupled Scanned IR Imaging Sensors

A program is under way to fabricate infrared-sensitive, charge- coupled imagers with Schottky-barrier detectors. The previous work has been with three-phase, single metallization line arrays using palladium-silicide, Schottky-barrier detectors. The present effort is directed at fabrication of a 25 x 50 area array. The design of the 25 x 50 area array is nearly complete, and masks will soon be ordered. Arrays of this design will be made with both Pd2Si and PtSi Schottky barriers. There will be optional masks for guard rings and for buried-channel operation. Processing has begun on a batch of wafers with Pt. Optical absorption measurements revealed a possible problem in the processing procedure, and an appropriate change was made. Infrared calculations were made demonstrating that thermal imaging with PtSi is possible, but that excess dark current at the detectors must be avoided.
See also report dated 14 Nov 1975, ADA025224.