Cite
MBE System for Antimonide Based Semiconductor Lasers
MLA
New Mexico Univ Albuquerque Center Forhigh Technology Materials, and Luke F. Lester. “MBE System for Antimonide Based Semiconductor Lasers.” DTIC AND NTIS, 1999. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn831678215&authtype=sso&custid=ns315887.
APA
New Mexico Univ Albuquerque Center Forhigh Technology Materials, & Lester, L. F. (1999). MBE System for Antimonide Based Semiconductor Lasers. DTIC AND NTIS.
Chicago
New Mexico Univ Albuquerque Center Forhigh Technology Materials, and Luke F. Lester. 1999. “MBE System for Antimonide Based Semiconductor Lasers.” DTIC AND NTIS. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn831678215&authtype=sso&custid=ns315887.