100-GHz Electro-Optic S-Parameter Characterization of High-Electron-Mobility Transistors

Progress in the research of modern semiconductor devices has advanced their response frequencies above 400 GHz. Such performance exceeds the conventional, purely electronic test instrumentation bandwidth, with the major limitations being imposed by the connectors and waveguides that are required for signal coupling to the device under test. This lack of convenient and accurate high-bandwidth device characterization methods imposes a serious obstacle to progress in semiconductor device development and utilization.