Noise in Microwave Semiconductor Oscillators and Amplifiers. Part I. Noise Properties of Transferred-Electron Devices.

A general noise theory has been developed for a nonlinear, self-oscillating device in a parallel G-L-C circuit. Variation of the nonlinear device admittance with both RF voltage and bias voltage is incorporated in the theory and the sources of noise are lumped into two equivalent noise generators: a video noise voltage generator and an RF noise current generator. The present study extends the work of Sweet by including the RF voltage dependence in the theory and by applying the theory to a quenched-mode admittance model of transferred-electron (TE) devices. The noise theory is used to study AM and FM TE oscillator noise as functions of load conductance, bias voltage, cavity tuning and carrier doping density for uniformly doped TE devices. (Modified author abstract)
See also report dated May 73, AD-764 259.