Advanced Concepts of Microwave Generation and Control in Solids.

The report contains a summary of the work accomplished during the three-year period of research and a list of the technical reports issued as part of the program. Also included is a detailed review of the work, performed during the twelfth quarterly period, on microwave solid state devices and circuits and on solid state materials and fabrication techniques. Specifically, the topics discussed are: Amplifier properties; high frequency high efficiency avalanche oscillations; computer aided analysis of Schottky Barrier Baritt diodes; Baritt devices; microwave transistor studies; multi-mesa TRAPATT fabrication; computer experiments on TRAPATT diodes; high performance transferred electron oscillators; growth and evaluation of InP for LSA oscillations; ohmic contacts to n+ InP; ion implantation; ionization rates in GaAs; vacuum epitaxial growth in silicon; and steady state liquid phase epitaxial growth of GaAs. (Modified author abstract)