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Characterization of Conduction Processes in Amorphous Semiconductors
- Source :
- DTIC AND NTIS
- Publication Year :
- 1971
-
Abstract
- Several different samples of 2As2Se3.As2Te3, As2Se3, As2Te3, As2S3 and Si(3%) Ge(4%) As(38%) Te(55%) were used in the photodielectric tests. The experiment was performed on these samples at room temperature, liquid nitrogen temperature (77K) and liquid helium temperature (4.2K) results are discussed.<br />Sponsored in part by DARPA.
Details
- Database :
- OAIster
- Journal :
- DTIC AND NTIS
- Notes :
- text/html, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn831507657
- Document Type :
- Electronic Resource