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MAXIMUM RF POWER TRANSISTOR COLLECTOR VOLTAGE.

Authors :
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Reich,Bernard
Hakim,Edward B.
Malinowski,Gregory J.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Reich,Bernard
Hakim,Edward B.
Malinowski,Gregory J.
Source :
DTIC AND NTIS
Publication Year :
1970

Abstract

The RF operating voltage of power transistors designed for operation in HF, VHF and UHF regions was found to be greater than previously realized. This higher operating voltage is attributed to the slow response of the device surface with respect to the operating frequency of the circuit. Since most devices have breakdown voltages which are initially surface limited, their voltage operation at the higher frequencies is superior to the 60-cycle curve tracer behavior. (Author)

Details

Database :
OAIster
Journal :
DTIC AND NTIS
Notes :
text/html, English
Publication Type :
Electronic Resource
Accession number :
edsoai.ocn831498417
Document Type :
Electronic Resource