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EVALUATION OF STANDARD ALUMINUM ELECTRODE THIN FILM CAPACITORS.
- Source :
- DTIC AND NTIS
- Publication Year :
- 1965
-
Abstract
- The report shows that the characteristics of thin film capacitors utilizing aluminum electrodes and SiO dielectrics can be improved by annealing at 450C. Some indication is given to the effects of various process parameters during dielectric deposition and supports the general concensus that consistently good thin film capacitors are rather difficult to fabricate. (Author)
Details
- Database :
- OAIster
- Journal :
- DTIC AND NTIS
- Notes :
- text/html, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn831469341
- Document Type :
- Electronic Resource