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Terahertz radiation from delta-doped GaAs
- Source :
- Birkedal , D , Hansen , O , Sørensen , C B , Jarasiunas , K , Brorson , S D & Keiding , S R 1994 , ' Terahertz radiation from delta-doped GaAs ' , Applied Physics Letters , vol. 65 , no. 1 , pp. 79-81 .
- Publication Year :
- 1994
-
Abstract
- Terahertz pulse emission from four different delta-doped molecular beam epitaxially grown GaAs samples is studied. We observe a decrease of the emitted THz pulse amplitude as the distance of the delta-doped layer from the surface is increased, and a change in polarity of the THz pulses as compared to bulk n-type doped GaAs reference samples. The electric fields in the region of the doping layer are investigated by photoreflectance spectroscopy. A careful analysis of Franz-Keldysh oscillations observed in the photoreflectance spectra provides information about the built-in fields on both sides of the delta-doped layer.
Details
- Database :
- OAIster
- Journal :
- Birkedal , D , Hansen , O , Sørensen , C B , Jarasiunas , K , Brorson , S D & Keiding , S R 1994 , ' Terahertz radiation from delta-doped GaAs ' , Applied Physics Letters , vol. 65 , no. 1 , pp. 79-81 .
- Notes :
- application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn826401287
- Document Type :
- Electronic Resource