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Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

Authors :
Rueckes, Thomas
Kim, Kyoungha
Joselevich, Ernesto
Tseng, Greg Y.
Cheung, Chin Li
Lieber, Charles M.
Rueckes, Thomas
Kim, Kyoungha
Joselevich, Ernesto
Tseng, Greg Y.
Cheung, Chin Li
Lieber, Charles M.
Source :
Barry Chin Li Cheung Publications
Publication Year :
2000

Abstract

A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 1012 elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.

Details

Database :
OAIster
Journal :
Barry Chin Li Cheung Publications
Notes :
application/pdf
Publication Type :
Electronic Resource
Accession number :
edsoai.ocn729141002
Document Type :
Electronic Resource