Back to Search
Start Over
RELATIONSHIP BETWEEN HOT-SPOT FORMATION AND SECOND BREAKDOWN IN TRANSISTORS.
- Source :
- DTIC AND NTIS
- Publication Year :
- 1968
-
Abstract
- By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. (Author)
Details
- Database :
- OAIster
- Journal :
- DTIC AND NTIS
- Notes :
- text/html, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn669560078
- Document Type :
- Electronic Resource