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Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB
- Publication Year :
- 2017
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 2017.
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Abstract
- Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
- Subjects :
- Solid-State Physics
Electronics And Electrical Engineering
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- NNG13CR48C
- Publication Type :
- Report
- Accession number :
- edsnas.20170004370
- Document Type :
- Report