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Characteristics of III-V Semiconductor Devices at High Temperature
- Publication Year :
- 1994
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1994.
-
Abstract
- This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.
- Subjects :
- Electronics And Electrical Engineering
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- RTOP 506-44-2C, , NAS3-25266
- Publication Type :
- Report
- Accession number :
- edsnas.19940028546
- Document Type :
- Report