Modelling of the dynamics of HgCdTe growth by the vertical Bridgman method

The analysis of Kim and Brown (1989), which described the pseudo-steady state of the HgCdTe melt/crystal system grown by the vertical Bridgman method, is extended to the study of the transients during the crystal growth and, in particular, at the beginning of the growth. The time-dependent numerical simulations developed show the development of a diffusion layer in the melt and the direct relationship between this layer and the intensity and the pattern of convection in the melt. It is shown that the spread of the solute layer occurs on a diffusive time scale, with the initial transient to the steady-state growth rate lasting several hours for the slow growth rates that are typical of the HgCdTe growth. The simulations demonstrate all the features observed experimentally by Szofran et al. (1984).