Back to Search
Start Over
Surface recombination velocity and lifetime in InP measured by transient microwave reflectance
- Publication Year :
- 1990
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1990.
-
Abstract
- Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.
- Subjects :
- Solid-State Physics
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- NAG3-604
- Publication Type :
- Report
- Accession number :
- edsnas.19910057309
- Document Type :
- Report