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Growth morphologies of crystal surfaces

Authors :
Xiao, Rong-Fu
Alexander, J. Iwan D
Rosenberger, Franz
Source :
Physical Review A. 43
Publication Year :
1991
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1991.

Abstract

A previously proposed Monte Carlo model (Xiao et al., 1988, 1990) is extended to three dimensions, and reevaporation after accommodation and growth on dislocation-induced steps are included. It is found again that, for a given set of growth parameters, the critical size beyond which a crystal cannot retain its macroscopically faceted shape scales linearly with the mean free path in the vapor. However, the three-dimensional systems show increased shape stability as compared with the corresponding two-dimensional cases. The experimental observation that the critical size of a growing crystal depends on the prevailing growth mechanism is confirmed, and detailed insight into the processes leading to the loss of face and facet stability is obtained.

Subjects

Subjects :
Materials Processing

Details

Language :
English
ISSN :
10502947
Volume :
43
Database :
NASA Technical Reports
Journal :
Physical Review A
Notes :
NAG1-972
Publication Type :
Report
Accession number :
edsnas.19910046593
Document Type :
Report
Full Text :
https://doi.org/10.1103/PhysRevA.43.2977