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Retention of ion-implanted-xenon in olivine: Dependence on implantation dose
- Publication Year :
- 1982
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1982.
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Abstract
- The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.
- Subjects :
- Solid-State Physics
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- NAGW-148, , NSF PHY-79-23638
- Publication Type :
- Report
- Accession number :
- edsnas.19830010257
- Document Type :
- Report