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New process produces high-power Schottky diodes
- Source :
- NASA Tech Briefs. 2(4)
- Publication Year :
- 1977
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1977.
-
Abstract
- Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.
- Subjects :
- Electronic Components And Circuits
Subjects
Details
- Language :
- English
- ISSN :
- 0145319X
- Volume :
- 2
- Issue :
- 4
- Database :
- NASA Technical Reports
- Journal :
- NASA Tech Briefs
- Publication Type :
- Report
- Accession number :
- edsnas.19770000337
- Document Type :
- Report