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High-performance Schottky diodes endure high temperatures

Authors :
Dickens, L. E
Trageser, F. G
Kim, H. B
Publication Year :
1975
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1975.

Abstract

Fabrication process and aluminum/GaAs (gallium arsenide) coupling are used to produce Schottky diodes that have high cutoff frequencies and can withstand operating temperatures in excess of 500 C.

Subjects

Subjects :
Electronic Components And Circuits

Details

Language :
English
Database :
NASA Technical Reports
Publication Type :
Report
Accession number :
edsnas.19750000101
Document Type :
Report

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