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Gravitational effects of process-induced dislocations in silicon
- Publication Year :
- 1974
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1974.
-
Abstract
- Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.
- Subjects :
- Physics, Solid-State
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- PROJ. 1031, , NAS8-29851
- Publication Type :
- Report
- Accession number :
- edsnas.19740027071
- Document Type :
- Report