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Capacitance voltage measurements on N-type InAs MOS diodes

Authors :
Dockerty, R. C
Schwartz, R. J
Thompson, H. W., Jr
Publication Year :
1971
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1971.

Abstract

Capacitance voltage measurements on interface of pyrolytically deposited n-type silicon dioxide- InAs MOS diodes as function of admittance at room and 77 K temperatures

Subjects

Subjects :
Electronic Equipment

Details

Language :
English
Database :
NASA Technical Reports
Notes :
NGR-15-005-021
Publication Type :
Report
Accession number :
edsnas.19710043077
Document Type :
Report

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Authors Abstract Subjects Details