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Avalanche multiplication in inas photodiodes.

Authors :
Emmons, R. B
Lucovsky, G
Publication Year :
1965
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1965.

Abstract

Avalanche multiplication in reverse biased indium arsenide p-n junction photodiodes operated at 300 degrees K

Subjects

Subjects :
Physics, Solid-State

Details

Language :
English
Database :
NASA Technical Reports
Notes :
NAS8-5030
Publication Type :
Report
Accession number :
edsnas.19650036903
Document Type :
Report

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