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Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)
- Source :
- CrystEngComm. 24(24):4372-4380
- Publication Year :
- 2022
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 2022.
Details
- Language :
- English
- ISSN :
- 14668033
- Volume :
- 24
- Issue :
- 24
- Database :
- NASA Technical Reports
- Journal :
- CrystEngComm
- Notes :
- 80NSSC19M0145, , 1809054
- Publication Type :
- Report
- Accession number :
- edsnas.19232750910053
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1039/d1ce01715b