Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

Dynamic loadline analysis illustrating the microwave performance limits of state-of-the-art AlGaN/GaN high electron-mobility transistors (HEMTs) under pulsed RF biasing and drive conditions are presented. Calculation of dynamic loadlines concurrent with load-pull measurements show the increase of the device RF knee voltage with increasing drain voltage as the cause of reduced output power-added efficiency (PAE) at high drain biases. In this study, an 8-GHz saturated output power of 14.1 W (9.4 W/mm) is achieved on a 1500 x 0.25 x /[micro][m.sup.2] AlGaN/GaN HEMT at a pulsed drain bias of [V.sub.D] = 40 V. The pulsed-bias conditions considered here preclude device self-heating as a mechanism responsible for the lower than expected output power and decrease in PAE with increasing drain bias. These data suggest electron trapping associated with the surface of the device between the gate and drain as the mechanism that limit the ultimate power, PAE, and linearity of AlGaN/GaN HEMTs. Index Terms--Dynamic loadline, gallium nitride, high electron-mobility transistor (HEMT), silicon carbide.