Wavelength dependence of transient laser-induced latchup in Epi-CMOS test structures

We report the thresholds for laser-induced latchup on epicaxial CMOS test structures for 600 nm and 815 nm excitation. We analyze the differences observed in terms of different iatchup triggering mechanisms and compare the results with measurements of energetic particle-induced latchup. Index Terms--Latchup, single event effects, picosecond, laser, epicaxial, cmos.