Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed. Index Terms--Bipolar transistor, dose, dose effect, dose rate, enhanced low-dose rate sensitivity (ELDRS), elevated temperature irradiation, genetic algorithm, interface traps, model, n-p-n transistor, optimum irradiation temperature, oxide trapped charges.