Synthesis and characterization of volatile, fluorine-free beta-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO (sub)2 buffer layers for superconducting electronics

Research has been conducted on the low-melting, volatile and fluorine-free lanthanide metal-organic chemical vapor deposition precursors. Results demonstrate the advantages of the precursors as a buffer layer for yttrium barium copper oxide films growth on these precursors.