On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors. Index Terms--Empirical large-signal models, FET, FET noise models, modeling, noise model extraction, noise parameter.