Neutron irradiation effects in high electron mobility transistors

Neutron irradiation effects on the I-V characteristics of AlGaAs-GaAs high electron mobility transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are studied. Physical mechanisms responsible for the observed degradation of the device parameters are discussed. Index Terms--High electron mobility transistors (HEMT), heterostructure insulated gate field-effect transistor (HIGFET), MODFET, neutron irradiation.