A new physics-based model for understanding single-event gate rupture in linear devices

This paper presents a new physics-based model for understanding the basic mechanism of single-event gate rupture (SEGR) in analog devices. This model accounts for the different competing physics mechanisms, such as carrier drift, diffusion, recombination in the drift diffusion, and Poisson's equations, to explain the dependence of SEGR on biasing voltage, cross section, and critical electric field strength. Hence, the model provides a more accurate method of understanding and predicting the breakdown of oxides from heavy-ion strikes. Index Terms--Dielectric breakdown, heavy ion, linear devices, oxide breakdown, single-event gate rupture (SEGR).