Researchers Submit Patent Application, 'Vertical Mosfet Using A Silicon Carbide Layer And A Silicon Layer For Improved Performance', for Approval (USPTO 20240379838)

Source :: Electronics Newsweekly. December 3, 2024, 7678
Publication Year :: 2024
Abstract: 2024 DEC 3 (VerticalNews) -- By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C., VerticalNews journalists report that a patent application by the inventors Darwish, Mohamed [...]

Subjects :: Metal oxide semiconductor field effect transistors -- Technology application -- Intellectual property
Semiconductors -- Intellectual property -- Technology application
Integrated circuits -- Intellectual property -- Technology application
Semiconductor chips -- Intellectual property -- Technology application
Electronics industry -- Intellectual property
Silicon carbide -- Intellectual property -- Technology application
Silicon -- Intellectual property -- Technology application
Standard IC
Technology application
Electronics industry
Electronics

Tools