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Properties of High Resistivity CoPdAlO Film for Possibility of Application to RF Integrated Inductor

Authors :
Kim, Taek-Soo
Suezawa, Kenkichi
Yamaguchi, Masahiro
Arai, Ken-Ichi
Shimada, Yutaka
Kim, Chong-Oh
Source :
IEEE Transactions on Magnetics. July, 2001, Vol. 37 Issue 4, 2255
Publication Year :
2001

Abstract

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, [H.sub.k] was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=[micro]'/[micro]') was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC. Index Terms--Complex permeability, ferromagnetic resonance, granular film, MMIC.

Details

ISSN :
00189464
Volume :
37
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Magnetics
Publication Type :
Academic Journal
Accession number :
edsgcl.78966927