Giant magnetoresistance enhancement in spin valves with nano-oxide layers

Authors :: Lai, Chih-Huang
Chen, C.J.
Chin, T.S.
Source :: Journal of Applied Physics. June 1, 2001, Vol. 89 Issue 11, p6928, 3 p.
Publication Year :: 2001
Abstract: Inserting the nano-oxide layer at the Ta/Co interface in the FeMn-based top spin valves makes it possible to increase the magnetoresistance ratio by 35%. The increase in magnetoresistance is accompanied by a rise in resistance change and a fall in sheet resistance.