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Crystal-field splitting of Pr3+ (4f2) energy levels in GaN
- Source :
- Journal of Applied Physics. June 15, 2001, Vol. 89 Issue 12, p7973, 4 p.
- Publication Year :
- 2001
-
Abstract
- The crystal field splitting of energy rates of Pr3+ in GaN were calculated and compared to photoluminescence and cathodoluminescence spectra of Pr3+ implanted in GaN by metal organic chemical vapor deposition, recently reported.
- Subjects :
- Gallium nitrate -- Research
Photoluminescence -- Observations
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.78479386