Back to Search
Start Over
Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
- Source :
- Journal of Applied Physics. June 15, 2001, Vol. 89 Issue 12, p7932, 8 p.
- Publication Year :
- 2001
-
Abstract
- Iron-boron pairs were studied in p-type silicon and cross sections of the acceptor level were taken using injection-level dependent lifetime measurements.
- Subjects :
- Semiconductor wafers -- Research
Silicon -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.78479380