Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice

Authors :: Mourokh, Lev G.
Malikova, L.
Pollak, Fred H.
Shi, B.Q.
Nguyen, C.
Source :: Journal of Applied Physics. Feb 15, 2001, Vol. 89 Issue 4, p2500, 3 p.
Publication Year :: 2001
Abstract: Research describing the photoreflectance at 300k of a chirped superlattice heterojunction bipolar transistor structure is presented. The inbuilt dc electric fields and associated doping levels are investigated.

Subjects :: Bipolar transistors -- Research
Physics -- Research
Superlattices as materials -- Research
Physics

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