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A detailed investigation of the quantum yield experiment
- Source :
- IEEE Transactions on Electron Devices. August, 2001, Vol. 48 Issue 8, p1696, 7 p.
- Publication Year :
- 2001
-
Abstract
- An investigation of the quantum yield (QY) experiment reveals that stress-induced leakage current (SILC) and QY are caused by different defects in the oxide. It is concluded that it is not correct to interpret reduction in QY after stress as a measure of energy loss of SILC electrons.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.77487388