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Low-frequency noise in polymer transistors
- Source :
- IEEE Transactions on Electron Devices. August, 2001, Vol. 48 Issue 8, p1688, 7 p.
- Publication Year :
- 2001
-
Abstract
- Low-frequency noise (LFN) properties of field-effect transistor s (FET) that rely on polymers as substrate materials are examined. Explanation is provided in terms of nonstationary mobility in the semiconducting polymer.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.77485541