Back to Search
Start Over
High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
- Source :
- IEEE Transactions on Electron Devices. June, 2001, Vol. 48 Issue 6, p1092, 5 p.
- Publication Year :
- 2001
-
Abstract
- A new study investigates the integration of high performance Ge p-i-n and n-i-p heterojunction photodiodes on Si.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.77484264