Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

Authors :: Makioka, Satoshi
Anda, Yoshiharu
Miyatsuji, Kazuo
Ueda, Daisuke
Source :: IEEE Transactions on Electron Devices. August, 2001, Vol. 48 Issue 8, p1510, 5 p.
Publication Year :: 2001
Abstract: Super self-aligned field-effect transistor (FET) technology is implemented in a low-loss integrated circuit (IC) switch. An insertion loss of 0.25 dB is obtained under a gate control voltage of 5V.

Subjects :: Integrated circuits -- Research
Mobile communication systems -- Research
Semiconductors -- Research
Switches -- Research
Business
Electronics
Electronics and electrical industries

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