Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length

Authors :: Svrcek, V.
Pelant, I.
Kocka, J.
Rezek, B.
Stuchikova, H.
Fejfar, A.
Stuchik, J.
Poruba, A.
Tousek, J.
Source :: Journal of Applied Physics. Feb 1, 2001, Vol. 89 Issue 3, p1800, 6 p.
Publication Year :: 2001
Abstract: A surface photovoltage model of microcrystalline silicon, measured using ambipolar diffusion length, is presented.

Subjects :: Electron transport -- Research
Photovoltaic cells -- Research
Physics

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