Back to Search
Start Over
A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
- Source :
- Journal of Applied Physics. Nov 1, 2000, Vol. 88 Issue 9, p5252, 3 p.
- Publication Year :
- 2000
-
Abstract
- Impurity-free and ion-implantation induced intermixing were compared in InGaAs/InP quantum wells.
- Subjects :
- Ion implantation -- Research
Quantum wells -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.76954817