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Uniformity of semi-insulating InP wafers obtained by Fe diffusion
- Source :
- Journal of Applied Physics. Nov 1, 2000, Vol. 88 Issue 9, p5225, 5 p.
- Publication Year :
- 2000
-
Abstract
- Fe diffusion at high temperature was used on As-cut semiconducting InP wafers, which became semi-insulating.
- Subjects :
- Semiconductor wafers -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.76954813