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Irradiation enhanced diffusion of boron in delta-doped silicon

Authors :
Leveque, P.
Kuznetsov, A. Yu
Christensen, J.S.
Svensson, B.G.
Nylandsted Larsen, A.
Source :
Journal of Applied Physics. May 15, 2001, Vol. 89 Issue 10, p5400, 6 p.
Publication Year :
2001

Abstract

Research describing the effects of irradiation on the diffusion of boron in delta-doped silicon is presented. In addition the presence of antimony and its effect on boron diffusion is investigated.

Subjects

Subjects :
Boron -- Research
Diffusion -- Research
Physics -- Research
Semiconductor wafers -- Research
Semiconductors -- Diffusion
Physics

Details

ISSN :
00218979
Volume :
89
Issue :
10
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.76510569

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