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The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs
- Source :
- Journal of Applied Physics. April 1, 2001, Vol. 89 Issue 7, p3662, 6 p.
- Publication Year :
- 2001
-
Abstract
- GaN monolayer effects on nitridation damage of molecular beam epitaxy gown GaN on GaAs(001), have been studied.
- Subjects :
- Gallium nitrate -- Research
Molecular beams -- Usage
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.75374363