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Effects of annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky diodes
- Source :
- IEEE Transactions on Electron Devices. March, 2001, Vol. 48 Issue 3, p573, 8 p.
- Publication Year :
- 2001
-
Abstract
- A new study investigates the annealing effect of Schottky contacts on Pd, Ti and Ni/n-Al0.11Ga0.89 diodes.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.75199162