ENHANCEMENT/DEPLETION MODE INGAP/ALGAAS PHEMT FOR HIGH EFFICIENCY POWER AMPLIFIERS

Authors :: TKACHENKO, Y.
ZHAO, Y.
WET, C.
BARTLE, D.
Source :: Microwave Journal. April 2001, Vol. 44 Issue 4, 122
Publication Year :: 2001
Abstract: An enhancement/depletion mode InGaP/AlGaAs power pseudomorphic high electron mobility transistor (PHEMT) is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes the excellent etch selectivity and [...]

Subjects :: Electronic components industry -- Product development
Microwave amplifiers -- Product development
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Electronics and electrical industries
Engineering and manufacturing industries
Telecommunications industry
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